sep . 20 1 6 . version 1. 1 magnachip semiconductor ltd . 1 m d v10n1k1 C si ngle n - channel trench mosfet 10 0v ? absolute maximum ratings (t c = 25 o c) characteristics symbol rating unit drain - source voltage v dss 10 0 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 12. 3 a t c = 70 o c 9.9 pulsed drain current ( 2 ) i dm 49 a power dissipation t c =25 o c p d 36.8 w t c = 70 o c 23. 5 single pulse avalanche energy ( 3 ) e as 14 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 36 o c/w thermal resistance, junction - to - case r jc 3. 4 md v10n1k1 single n - channel trench mosfet 100 v, 1 2. 3 a, 1 10 m features ? v ds = 10 0v ? i d = 1 2. 3 a @v gs = 10v ? r ds(on) (max) < 1 10 m @v gs = 10v < 1 1 6 m @v gs = 6.0 v ? 100% uil tested general description the md v10n1k1 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . md v10n1k1 is suitable device for dc to dc converter , load s witch and general purpose applications. s s s g g s s s d d d d d d d d p dfn 33 d g s
sep . 20 1 6 . version 1. 1 magnachip semiconductor ltd . 2 m d v10n1k1 C si ngle n - channel trench mosfet 10 0v ordering information part number temp. range package packing rohs status md v10n1k1 urh - 55~1 50 o c pdfn33 tape & reel halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 10 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 . 0 2.0 3.0 drain cut - off current i dss v ds = 8 0 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 10 a - 90 1 10 m v gs = 6.0 v, i d = 1 0 a - 9 6 1 1 6 forward transconductance g fs v ds = 10 v, i d = 10a - 17 - s dynamic characteristics total gate charge q g(10v) v ds = 5 0 v, i d = 10 a, v gs = 10v - 9.0 - nc gate - source charge q gs - 2.4 - gate - drain charge q gd - 1.5 - input capacitance c iss v ds = 40 v, v gs = 0v, f = 1.0mhz - 4 50 - pf reverse transfer capacitance c rss - 20 - output capacitance c oss - 50 - turn - on delay time t d(on) v gs = 10v, v ds = 50 v, i d = 10 a , r g = 3.0 - 6. 6 - n s rise time t r - 10. 1 - turn - off delay time t d(off) - 1 7.0 - fall time t f - 6.5 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 10 a, v gs = 0v - 0.75 1 .2 v body diode reverse recovery time t rr i f = 10 a, dl/dt = 100a/s - 42.0 - n s body diode reverse recovery charge q rr - 69.0 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. pulse width limited by t jmax 3. e as is tested at starting tj = 25 , l = 1.0 mh, i as = 5 . 3 a, v dd = 50 v, v gs = 10v
sep . 20 1 6 . version 1. 1 magnachip semiconductor ltd . 3 m d v10n1k1 C si ngle n - channel trench mosfet 10 0v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 3 6 9 12 3.0v 4.0v 8.0v 4.5v v gs = 10v 6.0v 3.5v i d , drain current [a] v ds , drain-source voltage [v] 0 3 6 9 12 60 70 80 90 100 110 120 v gs = 10v v gs = 6.0v drain-source on-resistance [m ? ] i d , drain current [a] -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 notes : 1. v gs = 10 v 2. i d = 10.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 notes : i d = 10.0a t j = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 v gs , gate-source voltage [v] t j =25 notes : v ds = 10v i d , drain current [a] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0 10 1 t j =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v]
sep . 20 1 6 . version 1. 1 magnachip semiconductor ltd . 4 m d v10n1k1 C si ngle n - channel trench mosfet 10 0v fig.7 gate charge chara cteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 3 6 9 12 15 i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc , thermal response t 1 , rectangular pulse duration [sec] 0 10 20 30 40 0 200 400 600 800 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 2 4 6 8 10 0 2 4 6 8 10 v ds = 50v note : i d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1 ms 1s 100 ms dc 10 ms 10s operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
sep . 20 1 6 . version 1. 1 magnachip semiconductor ltd . 5 m d v10n1k1 C si ngle n - channel trench mosfet 10 0v package dimension powerdfn33 (3.3x3.3mm) d imensions are in millimeters, unless otherwise specified (unit : mm) min max a 0.70 0.80 b 0.25 0.35 c 0.10 0.25 d 3.20 3.40 d1 3.00 3.20 d2 2.39 2.59 e 3.25 3.45 e1 3.00 3.20 e2 1.78 1.98 e l 0.30 0.50 l1 h 0.27 0.47 0 12 0.65 bsc 0.13 typ.
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